| Code 1 | Sensors (Multiple Choice) | Code 1 | Sensors (Multiple Choice) | Code 2 | Communication | Code 3 | Connector |
|---|---|---|---|---|---|---|---|
| TR | Temp/RH | H2S | H2S | N | RS-485 | N | Bare wire |
| CO2 | Infrared CO2 | NO2 | NO2 | ||||
| P2 | PM2.5 | SO2 | SO2 | ||||
| H | HCOC | CH4 | CH4 | ||||
| CO | CO | PID | Photoionization TVOC | ||||
| V | TVOC | 9 | Gas nine-in-one (V- Semiconductor) | BT | BT-Mesh | C | Quick Connector |
| O3 | O3 | 9-PID | Gas nine-in-one (V-PID) | ||||
| P1 | PM10 (Algorithm) | dB | Noise | ||||
| O2 | O2 | PR | Pressure | ||||
| NH3 | NH3 | LUX | Illuminance Sensor |
| Code 1 | Sensors (Multiple Choice) | Code 1 | Sensors (Multiple Choice) |
|---|---|---|---|
| TR | Temp/RH | H2S | H2S |
| CO2 | Infrared CO2 | NO2 | NO2 |
| P2 | PM2.5 | SO2 | SO2 |
| H | HCOC | CH4 | CH4 |
| CO | CO | PID | Photoionization TVOC |
| V | TVOC | 9 | Gas nine-in-one (V- Semiconductor) |
| O3 | O3 | 9-PID | Gas nine-in-one (V-PID) |
| P1 | PM10 (Algorithm) | dB | Noise |
| O2 | O2 | PR | Pressure |
| NH3 | NH3 | LUX | Illuminance Sensor |
| Code 2 | Communication | Code 3 | Connector |
|---|---|---|---|
| N | RS-485 | N | Bare wire |
| BT | BT-Mesh | C | Quick Connector |
| Power | Adapter | AC Input : 100~240V (50/60Hz) |
|---|---|---|
| DC Output : 12V,maximum 2A current | ||
| Equipment | DC Input : DC9~36V | |
| Power Consumption : 1.8W | ||
| Environment | -10~60℃,0%~100% (non-condensing) | |
| Communication | RS-485 Modbus RTU | |
| Physical Condition | Dimension | 220x85.7x54.2 (mm) |
| 220x99.65x54.2 (with mask,mm) | ||
| Installation | Wall mounted | |
| Weight | ≦2.3kg | |
| Housing | Material | Galvanized steel |
| Wire length | 3 meters | |
| Power | Adapter | AC Input : 100~240V (50/60Hz) |
|---|---|---|
| DC Output : 12V maximum 2A current | ||
| Equipment | DC Input : DC9~36V | |
| Power Consumption : 1.8W | ||
| Environment | -10~60℃,0%~100% (non-condensing) | |
| Communication | RS-485 Modbus RTU | |
| Physical Condition | Dimension | 220x85.7x54.2 (mm) |
| 220x99.65x54.2 (with mask,mm) | ||
| Installation | Wall mounted | |
| Weight | ≦2.3kg | |
| Housing | Material | Galvanized steel |
| Wire length | 3 meters | |
| Sensor Principle | Range | T90 | Operating Temperature | Resolution | Accuracy | Environmental Equilibrium Time | |
|---|---|---|---|---|---|---|---|
| Temp (Semiconductor) | -40~125℃ | <60 S | -20~60℃ | 0.1℃ | ±0.4℃ | 10min | |
| RH (Capacitive) | 0~100% | <60 S | -20~60℃ | 0.1% | ±3% | 10min | |
| CO₂ (Infrared) | 0~10,000ppm | <90 S | 0~50℃ | 1ppm | ±30ppm ±3% of Reading | 10sec | |
| PM2.5 (Laser) | 0~1,000µg / m³ | <90 S | -10~65℃ | 0.1 µg / m³ | ±10µg / m³ ±5% of Reading | 5min | |
| HCHO (Electrochemical) | 0.01~2.00ppm | <120 S | -10~50℃ | 0.01ppm | ≦±0.02ppm ±2% of Reading | 10min | |
| CO (Electrochemical) | 0~100ppm | <180 S | 0~50℃ | 0.1ppm | ±5ppm | 10min | |
| TVOC (Semiconductor) | 0~300ppm | <90 S | 0~40℃ | Rang | Resolution | ±10% | 5min |
| ≦2.008ppm | 1ppb | ||||||
| ≦11.11ppm | 6ppb | ||||||
| ≦60ppm | 32ppb | ||||||
| O₃ (Semiconductor) | 0.01~2.00ppm | <120 S | 0~40℃ | 0.01ppm | ±10% | 10min | |
| PM10 (Algorithm) | 0~1,200µg / m³ | <90 S | -10~65℃ | 0.1 µg / m³ | ±10µg / m³ ±5% of Reading | 5min | |
| O₂ (Electrochemical) | 0~30% | <60 S | -10~55℃ | 0.05% | ±1 of Reading | 5min | |
| NH₃ (Electrochemical) | 0~100ppm | <60 S | -10~50℃ | 0.01ppm | ±2% | 5min | |
| H₂S (Electrochemical) | 0~100ppm | <60 S | -10~50℃ | 0.01ppm | ±2% | 5min | |
| NO₂ (Electrochemical) | 0~20ppm | <60 S | 0~50℃ | 0.01ppm | ±2% | 5min | |
| SO₂ (Electrochemical) | 0~20ppm | <60 S | 0~50℃ | 0.01ppm | ±2% | 5min | |
| CH₄ (Semiconductor) | 0~100ppm | <90 S | 0~40℃ | 0.1ppm | ±10% | 10min | |
| PID100 (Photoionization) | 0~100ppm | ≦5 S | -10~60℃ | 25ppb | ±2% (Reproducibility) | ≦60 S | |
| Sensor Principle | Range | T90 |
|---|---|---|
| Temp (Semiconductor) | -40~125℃ | <60 S |
| RH (Capacitive) | 0~100% | <60 S |
| CO₂ (Infrared) | 0~10,000ppm | <90 S |
| PM2.5 (Laser) | 0~1,000µg / m³ | <90 S |
| HCHO (Electrochemical) | 0.01~2.00ppm | <120 S |
| CO (Electrochemical) | 0~100ppm | <180 S |
| TVOC (Semiconductor) | 0~300ppm | <90 S |
| O₃ (Semiconductor) | 0.01~2.00ppm | <120 S |
| PM10 (Algorithm) | 0~1,200µg / m³ | <90 S |
| O₂ (Electrochemical) | 0~30% | <60 S |
| NH₃ (Electrochemical) | 0~100ppm | <60 S |
| H₂S (Electrochemical) | 0~100ppm | <60 S |
| NO₂ (Electrochemical) | 0~20ppm | <60 S |
| SO₂ (Electrochemical) | 0~20ppm | <60 S |
| CH₄ (Semiconductor) | 0~100ppm | <90 S |
| PID100 (Photoionization) | 0~100ppm | ≦5 S |
| Sensor Principle | Operating Temperature | Resolution | |
|---|---|---|---|
| Temp (Semiconductor) | -20~60℃ | 0.1℃ | |
| RH (Capacitive) | -20~60℃ | 0.1% | |
| CO₂ (Infrared) | 0~50℃ | 1ppm | |
| PM2.5 (Laser) | -10~65℃ | 0.1 µg / m³ | |
| HCHO (Electrochemical) | -10~50℃ | 0.01ppm | |
| CO (Electrochemical) | 0~50℃ | 0.1ppm | |
| TVOC (Semiconductor) | 0~40℃ | Rang | Resolution |
| ≦2.008ppm | 1ppb | ||
| ≦11.11ppm | 6ppb | ||
| ≦60ppm | 32ppb | ||
| O₃ (Semiconductor) | 0~40℃ | 0.01ppm | |
| PM10 (Algorithm) | -10~65℃ | 0.1 µg / m³ | |
| O₂ (Electrochemical) | -10~55℃ | 0.05% | |
| NH₃ (Electrochemical) | -10~50℃ | 0.01ppm | |
| H₂S (Electrochemical) | -10~50℃ | 0.01ppm | |
| NO₂ (Electrochemical) | 0~50℃ | 0.01ppm | |
| SO₂ (Electrochemical) | 0~50℃ | 0.01ppm | |
| CH₄ (Semiconductor) | 0~40℃ | 0.1ppm | |
| PID100 (Photoionization) | -10~60℃ | 25ppb | |
| Sensor Principle | Accuracy | Environmental Equilibrium Time |
|---|---|---|
| Temp (Semiconductor) | ±0.4℃ | 10min |
| RH (Capacitive) | ±3% | 10min |
| CO₂ (Infrared) | ±30ppm ±3% of Reading | 10sec |
| PM2.5 (Laser) | ±10µg / m³ ±5% of Reading | 5min |
| HCHO (Electrochemical) | ≦±0.02ppm ±2% of Reading | 10min |
| CO (Electrochemical) | ±5ppm | 10min |
| TVOC (Semiconductor) | ±10% | 5min |
| O₃ (Semiconductor) | ±10% | 10min |
| PM10 (Algorithm) | ±10µg / m³ ±5% of Reading | 5min |
| O₂ (Electrochemical) | ±1 of Reading | 5min |
| NH₃ (Electrochemical) | ±2% | 5min |
| H₂S (Electrochemical) | ±2% | 5min |
| NO₂ (Electrochemical) | ±2% | 5min |
| SO₂ (Electrochemical) | ±2% | 5min |
| CH₄ (Semiconductor) | ±10% | 10min |
| PID100 (Photoionization) | ±2% (Reproducibility) | ≦60 S |
| Noise Measurement Range | Frequency Range | Resolution | Accuracy | Operate Temperature | |
|---|---|---|---|---|---|
| 30~120dB | 20~20K Hz | 0.1 dB | ≤±0.3dB | -20~60°C | |
| Pressure Range | Resolution | Accuracy | Operate Temperature | ||
|---|---|---|---|---|---|
| 300~1100 hPa | 1 hPa | ± 1 hPa | -40~85°C | ||
| Illuminance Measurement Range | Spectral Range | Accuracy | T90 | Repeatability | Operating Environment |
|---|---|---|---|---|---|
| 0~200,000Lux | 380nm~730nm | ±5%FS(25°C) | ≦60 S | <1% FS | Temperature :0~50°C Humidity :≦ 94%RH |
| Noise Measurement Range | Frequency Range | Resolution | Accuracy | Operate Temp | |
|---|---|---|---|---|---|
| 30~120dB | 20~20K Hz | 0.1 dB | ≤±0.3dB | -20~60°C | |
| Pressure Range | Resolution | Accuracy | Operate Temperature | ||
|---|---|---|---|---|---|
| 300~1100 hPa | 1 hPa | ± 1 hPa | -40~85°C | ||
| Illuminance Measurement Range | Spectral Range | Accuracy |
|---|---|---|
| 0~200,000Lux | 380nm~730nm | ±5%FS (25°C) |
| T90 | Repeatability | Operating Environment |
| ≦60 S | <1% FS | Temperature :0~50°C Humidity :≦ 94%RH |